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aft09ms031nr1 aft09ms031gnr1 1 rf device data freescale semiconductor, inc. rf power ldmos transistors high ruggedness n--channel enhancement--mode lateral mosfets designed for mobile two--way radio applications with frequencies from 764 to 941 mhz. the high gain, ruggedness and broadband performance of these devices make them ideal for large--signal, common source amplifier applications in mobile radio equipment. narrowband performance (13.6 vdc, i dq = 500 ma, t a =25 c, cw) frequency (mhz) g ps (db) d (%) p1db (w) 764 18.0 74.1 32 870 17.2 71.0 31 941 15.7 68.1 31 800 mhz broadband performance (13.6 vdc, i dq = 100 ma, t a =25 c, cw) frequency (mhz) g ps (db) d (%) p1db (w) 760 15.7 62.0 44 820 15.7 63.0 37 870 15.5 61.0 36 load mismatch/ruggedness frequency (mhz) signal type vswr p out (w) test voltage result 870 cw >65:1 at all phase angles 54 (3 db overdrive) 17 no device degradation features ? characterized for operation from 764 to 941 mhz ? unmatched input and output allowing wide frequency range utilization ? integrated esd protection ? integrated stab ility enhancements ? wideband ? full power across the band (764?870 mhz) ? 225 c capable plastic package ? exceptional thermal performance ? high linearity for: tetra, ssb, lte ? cost--effective over--molded plastic packaging ? in tape and reel. r1 suffix = 500 units, 24 mm tape width, 13 inch reel. typical applications ? output stage 800 mhz trunking band mobile radio ? output stage 900 mhz trunking band mobile radio document number: aft09ms031n rev. 0, 5/2012 freescale semiconductor technical data 764--941 mhz, 31 w, 13.6 v wideband rf power ldmos transistors aft09ms031nr1 aft09ms031gnr1 t o -- 2 7 0 -- 2 plastic aft09ms031nr1 figure 1. pin connections (top view) drain gate note: the backside of the package is the source terminal for the transistor. t o -- 2 7 0 -- 2 g u l l plastic aft09ms031gnr1 ? freescale semiconductor, inc., 2012. a ll rights reserved.
2 rf device data freescale semiconductor, inc. aft09ms031nr1 aft09ms031gnr1 table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +40 vdc gate--source voltage v gs --6.0, +12 vdc operating voltage v dd 17, +0 vdc storage temperature range t stg --65 to +150 c case operating temperature t c --40 to +150 c operating junction temperature (1,2) t j --40 to +225 c total device dissipation @ t c =25 c derate above 25 c p d 317 1.59 w w/ c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 81 c, 31 w cw, 13.6 vdc, i dq = 500 ma, 870 mhz r jc 0.63 c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 2, passes 2500 v machine model (per eia/jesd22--a115) a, passes 100 v charge device model (per jesd22--c101) iv, passes 1200 v table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd22--a113, ipc/jedec j--std--020 3 260 c table 5. electrical characteristics (t a =25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds =40vdc,v gs =0vdc) i dss ? ? 2 adc zero gate voltage drain leakage current (v ds = 13.6 vdc, v gs =0vdc) i dss ? ? 1 adc gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 600 nadc on characteristics gate threshold voltage (v ds =10vdc,i d =115 adc) v gs(th) 1.6 2.1 2.6 vdc drain--source on--voltage (v gs =10vdc,i d =1.2adc) v ds(on) ? 0.1 ? vdc forward transconductance (v gs =10vdc,i d =10adc) g fs ? 7.8 ? s 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/developm ent tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. (continued)
aft09ms031nr1 aft09ms031gnr1 3 rf device data freescale semiconductor, inc. table 5. electrical characteristics (t a =25 c unless otherwise noted) (continued) characteristic symbol min typ max unit dynamic characteristics reverse transfer capacitance (v ds = 13.6 vdc 30 mv(rms)ac @ 1 mhz, v gs =0vdc) c rss ? 2.1 ? pf output capacitance (v ds = 13.6 vdc 30 mv(rms)ac @ 1 mhz, v gs =0vdc) c oss ? 63 ? pf input capacitance (v ds = 13.6 vdc, v gs =0vdc 30 mv(rms)ac @ 1 mhz) c iss ? 140 ? pf functional tests (1) (in freescale narrowband test fixture, 50 ohm system) v dd = 13.6 vdc, i dq = 500 ma, p out =31w,f=870mhz common--source amplifier power gain g ps 16.0 17.2 18.5 db drain efficiency d 68.0 71.0 ? % load mismatch/ruggedness (in freescale test fixture, 50 ohm system, i dq = 500 ma) frequency (mhz) signal type vswr p out (w) test voltage, v dd result 870 cw >65:1 at all phase angles 54 (3 db overdrive) 17 no device degradation 1. measurement made with device in straight lead configuration before any lead forming oper ation is applied. lead forming is used for gull wing (gn) parts.
4 rf device data freescale semiconductor, inc. aft09ms031nr1 aft09ms031gnr1 typical characteristics 20 1 100 010 5 v ds , drain--source voltage (volts) figure 2. capacitance versus drain--source voltage c, capacitance (pf) 15 10 0 5 4 2 v ds , drain--source voltage (volts) figure 3. drain current versus drain--source voltage 6 2 v gs =4.0vdc note: measured with both sides of the transistor tied together. 4 3 1 10 81216 14 18 20 i ds , drain current (amps) t a =25 c 2.5 vdc 0 c rss c iss c oss 300 6 7 8 9 3.0 vdc 3.25 vdc 3.5 vdc 250 10 9 90 t j , junction temperature ( c) figure 4. mttf versus junction temperature -- cw note: mttf value represents the total cumulative operating time under indicated test conditions. 10 7 10 6 10 4 110 130 150 170 190 mttf (hours) 210 230 10 8 10 5 v dd = 13.6 vdc i d =2.6amps 3.2 amps 3.9 amps measured with 30 mv(rms)ac @ 1 mhz v gs =0vdc
aft09ms031nr1 aft09ms031gnr1 5 rf device data freescale semiconductor, inc. 870 mhz narrowband production test fixture figure 5. aft09ms031nr1 narrowband test circuit component layout ? 870 mhz c10 c9 c13 c14 b1 c15 b2 c16 c11 c12 c7 c2 l3 l2 c5 c3 l1 c4 c6 aft09ms031n rev. 0 c1 v gg v dd cut out area c8 table 6. aft09ms031nr1 narrowband test circuit component designations and values ? 870 mhz part description part number manufacturer b1, b2 rf beads, long 2743021447 fair--rite c1 3.9 pf chip capacitor atc100b3r9ct500xt atc c2, c14, c15 56 pf chip capacitors atc100b560ct500xt atc c3, c4, c5, c6 10 pf chip capacitors atc100b100jt500xt atc c7, c8 3.6 pf chip capacitors atc100b3r6ct500xt atc c9 2.5 f chip capacitor grm31cr71h225ka88l murata c10, c11 0.1 f chip capacitors c1206c104k1rac--tu kemet c12 10,000 pf chip capacitor atc200b103kt50xt atc c13 22 f, 25 v tantalum capacitor tpsd226m025r0200 avx c16 330 f, 35 v electrolytic capacitor mcgpr35v337m10x16--rh multicomp l1 8.0 nh, 3 turn inductor a03tklc coilcraft l2 18.5 nh, 5 turn inductor a05tklc coilcraft l3 5.0 nh, 2 turn inductor a02tklc coilcraft pcb 0.030 , r =3.5 ro4350b rogers
6 rf device data freescale semiconductor, inc. aft09ms031nr1 aft09ms031gnr1 rf input rf output z1 0.280 0.080 microstrip z2 0.490 0.120 microstrip z3 0.610 0.320 microstrip z4 0.320 0.155 0.620 microstrip taper z5 0.139 0.620 microstrip z6 0.225 0.620 microstrip z7 0.121 0.620 microstrip z8 0.254 0.620 microstrip z9 0.190 0.080 microstrip z10 0.040 0.080 microstrip z11 0.454 0.520 microstrip z12 0.054 0.520 microstrip z13 0.620 0.420 0.620 microstrip taper z14 0.433 0.420 microstrip z15 0.665 0.420 microstrip z16 0.200 0.420 microstrip figure 6. aft09ms031nr1 narrowband test circuit schematic ? 870 mhz table 7. aft09ms031nr1 narrowband test circuit microstrips ? 870 mhz description microstrip description microstrip c9 c10 l1 c2 c13 c14 z5 z4 z3 z2 z1 c1 b1 z8 z7 z6 c3 c4 c5 z11 z10 z9 c6 z14 z13 z12 l2 z16 z15 c8 l3 c7 c15 c11 b2 c12 c16 v ds + v gs +
aft09ms031nr1 aft09ms031gnr1 7 rf device data freescale semiconductor, inc. typical characteristics ? 870 mhz p out , output power (watts) 0 0 v gs , gate--source voltage (volts) figure 7. cw output power versus gate--source voltage 25 0.5 1 1.5 2 2.5 3 4 20 5 15 10 30 p out , output power (watts) 4.5 p in , input power (watts) g ps , power gain (db) 15 16 15.5 0.01 2 d g ps 30 50 40 10 20 17.5 17 16.5 18 60 70 80 0.1 d , drain efficiency (%) p out v dd = 13.6 vdc, i dq = 500 ma f = 870 mhz 1 v dd = 12.5 vdc p in =0.3w 18.5 19 0 figure 8. power gain, cw output power and drain efficiency versus input power v dd = 13.6 vdc, p in =0.3w v dd = 12.5 vdc, p in =0.6w v dd = 13.6 vdc, p in =0.6w 35 40 45 f = 870 mhz v dd = 13.6 vdc, i dq = 500 ma, p out =31wavg. f mhz z source ? z load ? 870 0.28 -- j0.71 0.98 -- j0.52 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 9. narrowband series equivalent source and load impedance ? 870 mhz input matching network device under test output matching network z source z load 50 ? 50 ?
8 rf device data freescale semiconductor, inc. aft09ms031nr1 aft09ms031gnr1 760--870 mhz broadband reference circuit, 50 ohm system table 8. 760--870 mhz broadband performance (13.6 vdc, i dq = 100 ma, t a =25 c, cw) frequency (mhz) g ps (db) d (%) p1db (w) 760 15.7 62.0 44 820 15.7 63.0 37 870 15.5 61.0 36 table 9. load mismatch/ruggedness (in freescale reference circuit) frequency (mhz) signal type vswr p out (w) test voltage, v dd result 870 cw >65:1 at all phase angles 64 (3 db overdrive) 17 no device degradation
aft09ms031nr1 aft09ms031gnr1 9 rf device data freescale semiconductor, inc. 760--870 mhz broadband reference circuit figure 10. aft09ms031nr1 broadband reference circuit component layout ? 760--870 mhz c1 l1 c2 l2 c4 c5 c3 c13 c15 c14 c9 c12 c11 c10 c7 j1 c6 t o -- 2 7 0 -- 2 rev. 1 c17 c8 c16 q1 table 10. aft09ms031nr1 broadband reference circuit component designations and values ? 760--870 mhz part description part number manufacturer c1, c10, c11, c12 5.6 pf chip capacitors atc600f5r6bt250xt atc c2 6.8 pf chip capacitor atc600f6r8bt250xt atc c3 8.2 pf chip capacitor atc600f8r2bt250xt atc c4 12 pf chip capacitor atc600f120jt250xt atc c5 10 pf chip capacitor atc600f100jt250xt atc c6, c7 30 pf chip capacitors atc600f300jt250xt atc c8, c9 22 pf chip capacitors atc600f220jt250xt atc c13, c16 240 pf chip capacitors atc600f241jt250xt atc c14 0.10 f chip capacitor grm21br71h104ka01b murata c15 0.01 f chip capacitor GRM21BR72A103KA01B murata c17 22 pf chip capacitor atc100a220jt150xt atc l1 6.8 nh inductor 0805wl6r8kt atc l2 17 nh inductor 0908sq17njlc coilcraft q1 rf power ldmos transistor aft09ms031nr1 freescale j1 3pin amp--9--146305--0 te connectivity pcb 0.020 , r =4.8 s1000--2, fr4 shengyi
10 rf device data freescale semiconductor, inc. aft09ms031nr1 aft09ms031gnr1 z1, z20 0.034 0.060 microstrip z2* 0.034 0.380 microstrip z3* 0.034 0.215 microstrip z4 0.034 0.054 microstrip z5, z6 0.266 0.025 microstrip z7, z9 0.266 0.080 microstrip z8 0.034 0.050 microstrip z10 0.266 0.015 microstrip z11, z12 0.390 0.120 microstrip z13 0.390 0.080 microstrip z14 0.034 0.100 microstrip z15 0.390 0.200 microstrip z16 0.034 0.110 microstrip z17 0.034 0.010 microstrip z18* 0.034 0.190 microstrip z19* 0.034 0.110 microstrip * line length includes microstrip bends figure 11. aft09ms031nr1 broadband reference circuit schematic ? 760--870 mhz table 11. aft09ms031nr1 broadband reference circuit microstrips ? 760--870 mhz description microstrip description microstrip rf input rf output z2 z3 z10 l1 v ds c14 c15 c11 z4 c2 z5 z6 c3 z7 c4 c5 c9 z12 l2 c16 z14 c8 z15 z16 z17 z18 z19 c10 z1 z11 c12 z8 v gs c17 z9 c6 c7 z13 z20 c1 c13
aft09ms031nr1 aft09ms031gnr1 11 rf device data freescale semiconductor, inc. typical characteristics ? 760--860 mhz broadband reference circuit 750 g ps f, frequency (mhz) figure 12. power gain, cw output power and drain efficiency versus frequency at a constant input power 14 17 16.5 30 66 63 57 40 35 d , drain efficiency (%) d g ps , power gain (db) 16 15.5 15 14.5 770 790 810 830 850 870 890 60 p out ,output power (watts) v dd = 13.6 vdc, p in =1w i dq = 100 ma p out 750 g ps f, frequency (mhz) figure 13. power gain, cw output power and drain efficiency versus frequency at a constant input power 14 17 16.5 27 66 64 60 37 32 d , drain efficiency (%) d g ps , power gain (db) 16 15.5 15 14.5 770 790 810 830 850 870 890 62 p out ,output power (watts) v dd = 12.5 vdc, p in =1w i dq = 100 ma p out
12 rf device data freescale semiconductor, inc. aft09ms031nr1 aft09ms031gnr1 typical characteristics ? 760--870 mhz broadband reference circuit 0 0 v gs , gate--source voltage (volts) figure 14. cw output power versus gate--source voltage 60 1 2 345 40 10 30 20 p out , output power (watts) f = 820 mhz v dd = 13.6 vdc, p in =1w v dd = 13.6 vdc, p in =0.5w v dd = 12.5 vdc p in =0.5w detail a figure 15. power gain, cw output power and drain efficiency versus input power and frequency p in , input power (watts) g ps , power gain (db) 12 15 14 0.03 2 18 17 16 0.1 820 mhz v dd = 13.6 vdc i dq = 100 ma 1 g ps d , drain efficiency (%) p out , output power (watts) 50 v dd = 12.5 vdc, p in =1w 13 870 mhz 760 mhz 870 mhz 820 mhz 760 mhz 760 mhz 820 mhz 870 mhz 30 50 40 10 20 60 70 40 0 20 60 120 80 100 d p out 0 0 v gs , gate--source voltage (volts) 5 0.4 0.8 1.2 1.6 2 3 2 1 p out , output power (watts) 4 detail a f = 820 mhz v dd = 13.6 vdc p in =1w v dd = 12.5 vdc p in =1w v dd = 12.5 vdc p in =0.5w v dd = 13.6 vdc p in =0.5w
aft09ms031nr1 aft09ms031gnr1 13 rf device data freescale semiconductor, inc. 760--870 mhz broadband reference circuit z source f = 760 mhz f = 870 mhz z o =2 ? z load f = 760 mhz f = 870 mhz v dd = 13.6 vdc, i dq = 100 ma, p out =31wavg. f mhz z source ? z load ? 760 0.85 -- j1.31 0.80 -- j0.92 770 0.80 -- j1.30 0.78 -- j0.88 780 0.75 -- j1.28 0.78 -- j0.85 790 0.69 -- j1.26 0.76 -- j0.81 800 0.65 -- j1.24 0.76 -- j0.78 810 0.59 -- j1.21 0.72 -- j0.75 820 0.55 -- j1.18 0.70 -- j0.73 830 0.51 -- j1.15 0.67 -- j0.70 840 0.46 -- j1.11 0.62 -- j0.66 850 0.42 -- j1.01 0.57 -- j0.62 860 0.39 -- j1.02 0.52 -- j0.57 870 0.36 -- j0.97 0.48 -- j0.52 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 14. broadband series equivalent source and load impedance ? 760--870 mhz input matching network device under test output matching network z source z load 50 ? 50 ?
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20 rf device data freescale semiconductor, inc. aft09ms031nr1 aft09ms031gnr1 product documentation, software and tools refer to the following documents, software and tools to aid your design process. application notes ? an1907: solder reflow attach method for high power rf devices in over--molded plastic packages ? an1955: thermal measurement methodology of rf power amplifiers ? an3263: bolt down mounting method for high power rf transistors and rfics in over--molded plastic packages ? an3789: clamping of high power rf transistors and rfics in over--molded plastic packages engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? .s2p file development tools ? printed circuit boards for software and tools, do a part number search at http://www.fr eescale.com, and select the ?part number? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 0 may 2012 ? initial release of data sheet
aft09ms031nr1 aft09ms031gnr1 21 rf device data freescale semiconductor, inc. information in this document is provided solely to enable system and software implementers to use freescale products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. freescale reserves the right to make changes without further notice to any products herein. freescale makes no warranty, representation, or guarantee regarding the suitability of its products fo r any particular purpose, nor does freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all li ability, including without limit ation consequential or incidental damages. ?typical? parameters that may be provided in freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: http://www.reg.net/v2/webservices/freescale/docs/termsandconditions.htm. freescale, the freescale logo, altivec, c--5, codetest, codewarrior, coldfire, c--ware, energy efficient solutions logo, kinetis, mobilegt, powerquicc, processor expert, qoriq, qorivva, starcore, symphony, and vortiqa are trademarks of freescale semiconductor, inc., reg. u.s. pat. & tm. off. airfast, beekit, beestack, coldfire+, corenet, flexis, magniv, mxc, platform in a package, qoriq qonverge, quicc engine, ready play, safeassure, smartmos, turbolink, vybrid, and xtrinsic are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. e 2012 freescale semiconductor, inc. how to reach us: home page: freescale.com web support: freescale.com/support document number: aft09ms031n rev. 0, 5/2012

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